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کامپیوتر و شبکه::
ظزفیت خازنی
Wire capacitance can contribute up to 70% of the total chip capacitance [2], [3].
Moreover, this model takes into account a realistic, circuit-compatible CNFET structure and includes practical device nonidealities, parasitics, Shottkey-barrier effects at the contacts, doped source- drain extension regions, scattering (nonideal near-ballistic transport), inter-CNT charge screening effects, back-gate (substrate bias) effect and Gate and Source/Drain, resistances and capacitances.
The model also comprises a full trans capacitance network for more accurate dynamic and transient performance simulations.
Parameters Description Value Lch Physical channel length 32 nm Lgeff Mean free path in the intrinsic CNT channel 100 nm Lss Length of doped CNT source-side extension region 32 nm Ldd Length of doped CNT drain-side extension region 32 nm Kgate Dielectric constant of high-k top gate dielectric material 16 Tox Thickness of high-k top gate dielectric material 4 nm Csub Coupling capacitance between the channel region and the substrate 40 pF/m Efi The Fermi level of the doped S/D tube 6 eV
واژگان شبکه مترجمین ایران
3
عمومی::
ظرفیت
We will model the quantum dot and the exterior leads using the classical concept of capacitance and consider electron conduction via tunneling
It was realized that current flow through the material could be inhibited if the capacitance of the particle was sufficiently small.
where Q is the charge on the conductors (+Q on one conductor and ‐Q on the other), C is the capacitance, and V is the d.c. voltage between the conductors.
For nanoscale dimensions, the small values of capacitance lead to the interesting observation that the transfer of a single electron results in an appreciable energy change.
It turns out that the previously described oscillation is difficult to observe due to experimental factors, such as the generally high lead capacitance in experimental systems.
واژگان شبکه مترجمین ایران